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Home > Journals > SCIREA Journal of Physics > Archive > Paper Information

An important relation between threshold voltage and the density of interfacial defect states in Poly-Si TFTs

Volume 5, Issue 5, October 2020    |    PP. 100-107    |PDF (240 K)|    Pub. Date: October 11, 2020
14 Downloads     89 Views  

Author(s)
Lei Qiang, Institute of Science and Technology, University of Sanya, Sanya, 572022, China

Abstract
Interface defect states of polycrystalline silicon thin-film transistors (poly-Si TFTs) play important role in the degradation of subthreshold characteristics. In this paper, an investigation of interface states is taken on, results show that both the threshold voltage and the difference between the threshold voltage and the gate voltage corresponding to the minimum drain current are proportional to the density of interface states at the SiO2/poly-Si interface, and results fit well with the experimental data.

Keywords
poly-Si, thin film transistor, interface defect states

Cite this paper
Lei Qiang, An important relation between threshold voltage and the density of interfacial defect states in Poly-Si TFTs, SCIREA Journal of Physics. Vol. 5 , No. 5 , 2020 , pp. 100 - 107 .

References

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