Author(s)
H. Van Cong, Université de Perpignan Via Domitia, Laboratoire de Mathématiques et Physique (LAMPS), EA 4217, Département de Physique, 52, Avenue Paul Alduy, F-66 860 Perpignan, France.

Abstract
In our two previous papers [1, 2], referred to as I and II. In I, our new expression for the extrinsic static dielectric constant, \varepsilon\left(r_{d\left(a\right)}\right), r_{d\left(a\right)} being the donor (acceptor) d(a)-radius, was determined by using an effective Bohr model, suggesting that, for an increasing r_{d\left(a\right)}, \varepsilon\left(r_{d\left(a\right)}\right), due to such the impurity size effect, decreases, and affecting strongly the critical impurity density in the metal-insulator transition and also various majority carrier transport coefficients given in the n(p)-type degenerate Si crystal, defined for the reduced Fermi energy \mathbf{\xi}_{\mathbf{n}(\mathbf{p})}(\geqq\mathbf{1}). Then, using the same physical model and same mathematical methods and taking into account the corrected values of energy-band-structure parameters, all the numerical results, obtained in II, are now revised and performed, giving rise to some important concluding remarks, as follows.(1)The critical donor(acceptor)-density, N_{CDn\left(NDp\right)}(r_{d(a)}), determined in Eq. (3), can be explained by the densities of electrons (holes) localized in exponential conduction (valance)-band (EBT) tails, N_{CDn\left(CDp\right)}^{EBT}(r_{d(a)}), given in Eq. (21).(2) In Table 5, the numerical results of the electrical conductivity, \sigma(N^\ast,r_{d(a)},T), given in Eq. (27), are obtained for the degenerate P-Si system, suggesting an accuracy of the order of 7.5%, which gives us confidence in the determination of other electrical-and-thermoelectric properties. (3) Finally, in Tables 10 and 11, one notes here that with increasing temperature T(K): (i) for reduced Fermi energy \xi_{n(p)}(=1.813), while the numerical results of the Seebeck coefficient Sb present a same minimum (maximum) \left(=\left(\mp\right)1.563\times{10}^{-4}\frac{V}{K}\right), those of the figure of merit ZT show a same maximum ZT\left(=\mathbf{1}\right), (ii) for \xi_n=1, those of Sb and those of ZT present same results: Sb\left(=\left(\mp\right)1.322\times{10}^{-4}\frac{V}{K}\right) and 0.715, respectively, (iii) for \xi_{n(p)}=1.813 and \xi_{n(p)}=1, those of the well-known Mott figure of merit give same \left(ZT\right)_{Mott}=\frac{\pi^2}{3\times\xi_{n(p)}^2}(\simeq1 and 3.290), respectively, and finally, (iv) we show here that in the degenerate Si-case, the Wiedemann-Frank, given in Eq. (25a), is found to be exact.

Keywords
Effects of the impurity-size and heavy doping; effective autocorrelation function for potential fluctuations; optical, electrical, and thermoelectric properties; figure of merit; Wiedemann-Franz law

Cite this paper
H. Van Cong, Same maximum figure of merit ZT(=1), due to effects of impurity size and heavy doping, obtained in the n(p)-type degenerate Si-crystal at same reduced Fermi energy and same minimum (maximum) Seebeck coefficient , at which same , SCIREA Journal of Physics. Vol. 8 , No. 2 , 2023 , pp. 66 - 90 . https://doi.org/10.54647/physics140524

References

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