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31.474 (44.359) %- Limiting Highest Efficiencies obtained in the \mathbf{n}^+(\mathbf{p}^+)-\mathbf{p}(\mathbf{n})\ Crystalline GaAs Junction Solar Cells at T=300 K, Due to The Effects of Heavy (Low) Doping and Impurity Size

Volume 7, Issue 4, August 2022    |    PP. 114-135    |PDF (1333 K)|    Pub. Date: July 26, 2022
DOI: 10.54647/physics14475    7 Downloads     1091 Views  

Author(s)
H. Van Cong, Université de Perpignan Via Domitia, Laboratoire de Mathématiques et Physique (LAMPS), EA 4217, Département de Physique, 52, Avenue Paul Alduy, F-66 860 Perpignan, France.
K. C. Ho-Huynh Thi, Université de Perpignan Via Domitia, Laboratoire de Mathématiques et Physique (LAMPS), EA 4217, Département de Physique, 52, Avenue Paul Alduy, F-66 860 Perpignan, France.
P. Blaise, R. Brouzet, Université de Perpignan Via Domitia, Laboratoire de Mathématiques et Physique (LAMPS), EA 4217, Département de Physique, 52, Avenue Paul Alduy, F-66 860 Perpignan, France.
O. Henri-Rousseau, Université de Perpignan Via Domitia, Laboratoire de Mathématiques et Physique (LAMPS), EA 4217, Département de Physique, 52, Avenue Paul Alduy, F-66 860 Perpignan, France.

Abstract
The present manuscript is a revised form of that, with MN: 14473) In our recent works [1, 2], by basing on: (1) the effects of heavy(light) doping and donor (acceptor), d(a), size , which affect the total carrier-minority saturation current density J_{oI(II)}\equivJ_{En(p)o}+J_{Bp(n)o},\ J_{En(p)o}(J_{Bp(n)o}),\ being injected respectively into the heavily doped donor (acceptor)-GaAs emitter-lightly doped acceptor (donor)-Si base regions, HD[d(a)-Si]ER-LD[a(d)- Si]BR, of n^+(p^+)-p(n) junction solar cells, respectively, (2) an effective Gaussian donor-density profile to determine J_{En(p)o}, and (3) the use of two experimental points, we investigated the photovoltaic conversion factor n_{I(II)}, short circuit current density J_{scI(II)}, fill factor F_{I(II)}, and finally efficiency \eta_{I(II)}. Then, the limiting highest efficiencies, 31% (30.65%), were obtained in n^+(p^+)-p(n) junction solar cells at 300K. In the present work, by basing on such a treatment method, and using the physical conditions such as: W=15\ \mu m,{\ N}_{Sb(In)}={10}^{19}\ ({10}^{20})\ {\rm cm}^{-3}\ and\ S\ =100\ (cm/s\ ), according to the highly transparent HD[Sb(In)-GaAs]ER, and then N_{In(Sb)}={10}^{18}\ ({10}^{17}){\rm cm}^{-3} for LD[In(Sb)-GaAs]BR, of n^+(p^+)-p(n) junction solar cells, we get respectively the maximal values of \eta_{I(II)}, \eta_{I(II)-max.}=31.474% (44.359%), as those observed in Tables 3 et 5, which can be compared with the result of \eta=29.1\ %, obtained for GaAs-thin film cell, and \eta=45.7\ %, for GaInP/GaAs/GaInAs/GaInAs multijunction cell, by Green et al. [3].

Keywords
donor (acceptor)-size effect; heavily doped emitter region; photovoltaic conversion factor; open circuit voltage; photovoltaic conversion efficiency

Cite this paper
H. Van Cong, K. C. Ho-Huynh Thi, P. Blaise, R. Brouzet, O. Henri-Rousseau, 31.474 (44.359) %- Limiting Highest Efficiencies obtained in the \mathbf{n}^+(\mathbf{p}^+)-\mathbf{p}(\mathbf{n})\ Crystalline GaAs Junction Solar Cells at T=300 K, Due to The Effects of Heavy (Low) Doping and Impurity Size, SCIREA Journal of Physics. Vol. 7 , No. 4 , 2022 , pp. 114 - 135 . https://doi.org/10.54647/physics14475

References

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